OP.CP TRN.10 TO 35V 11mA 2500Vrms

Transistor Inverter
Inverter For Air Conditionor
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
•  Input threshold current: IF=5mA(max.)
•  Supply current (ICC): 11mA(max.)
•  Supply voltage (VCC): 10−35V
•  Output current (IO): ±1.5A (max.)
•  Switching time (tpLH/tpHL): 1.5µs(max.)
•  Isolation voltage: 2500Vrms(min.)
•  UL recognized: UL1577, file No.E67349
•  Option (D4) type